• Subhash Dhanaji Lakade

At room temperature dip method was developed to deposit (Sb0.3Bi0.7)2S3 composite thin films. the preparative parameters such as concentration of bismuth ions, concentration of antimony ions, volume ratio of bismuth and antimony, complexing agent, deposition time, were optimized to get good quality (Sb0.3Bi0.7)2S3 composite thin film. we have analysed composition, Crystallographic, Microscopic, Optical, Electrical, Thermoelectrical, properties of composite thin film. Compositional analysis of thin film were 12.62 ,37.89,49.49, The maximum strong reflection shows that for thin films have been originating from (101) plane. For Sb-rich films, prominent spherical grains were observed. They are fused with each other. For Bi-rich films, thin rope shaped rods with some spherical grains rods were observed. The magnitude of absorption coefficient was found to be 104 per cm. For shorter wavelength the magnitude of absorptivity is high. As the wavelength increases absorptivity decreases. specific conductance was found to be 1.426 x 10-6 (Ω cm)-1 at 300 K and 1.563 x 10-3 (Ω cm)-1 Thermoelectric power changes from 313.78 to 359 µv/K as the temperature increase from 300 to 525K.

(Sb0.3Bi0.7)2S3thinfilms,crystallographic,microscopic,optical,electrical,thermoelectrical

"Preparation and characterization of (Sb0.3Bi0.7)2S3 composite thin film by Dip method", International Journal of Emerging Technologies and Innovative Research (www.jetir.org), ISSN:2349-5162, Vol.8, Issue 10, page no.e647-e654, October-2021, Available :http://www.jetir.org/papers/JETIR2110495.pdf

"Preparation and characterization of (Sb0.3Bi0.7)2S3 composite thin film by Dip method", International Journal of Emerging Technologies and Innovative Research (www.jetir.org | UGC and issn Approved), ISSN:2349-5162, Vol.8, Issue 10, page no. ppe647-e654, October-2021, Available at : http://www.jetir.org/papers/JETIR2110495.pdf