• Ravi Ranjan
• Abhishek Shrivastava

This paper presents the lowest power 8X8 SRAM array that is designed to store 128 bits. Absolute arrays are equipped with ancillary devices including SRAM cells, write driver circuits, revived circuits, address decoders, and sense amplifiers. This documentation is for an 8X8 SRAM array that utilizes 7T SRAM cells and is ranked according to total power consumption. Location and obstructions have a significant role in determining SRAM's overall efficacy. The suggested architecture for an 8x8 SRAM array is similar to existing 8x8 SRAM arrays that use conservative 6T SRAM cells, with the addition of a single NMOS transistor placed between two cross-coupled inverters. These designs reduce static power in support mode. The cadence simulation device is exercised at 90nm technology for manipulation. The proportional research is completed in a sequence of Read, Write Access time, Leakage power consumption, and absolute Leakage power consumption. Utilizing the Quiet Bitline approach, in which the voltage of bit lines remains as low as possible to attain high speed with low power while operating at a temperature of 270C, we have optimized leakage current and low power of an SRAM memory array. With the use of a low-power, quiet-bit line method, all bit lines are kept at low voltages at all times. This prevents wasteful full-swing charging on the bit line one-side driving scheme, which is utilized for write operations, and for read operations, that employ precharged, free-pulling techniques

SRAM, 7T SRAM Cell, Cadence, CMOS, Leakage Power.

"Design and Analysis of Low Power 7T SRAM 8x8 SRAM Memory Array with Quit Bit Line Technique ", International Journal of Emerging Technologies and Innovative Research (www.jetir.org), ISSN:2349-5162, Vol.10, Issue 8, page no.e87-e92, August-2023, Available :http://www.jetir.org/papers/JETIR2308411.pdf

"Design and Analysis of Low Power 7T SRAM 8x8 SRAM Memory Array with Quit Bit Line Technique ", International Journal of Emerging Technologies and Innovative Research (www.jetir.org | UGC and issn Approved), ISSN:2349-5162, Vol.10, Issue 8, page no. ppe87-e92, August-2023, Available at : http://www.jetir.org/papers/JETIR2308411.pdf