• Moges Gebeyehu Tessema
• Enerique Quirgo Gonzalez

Abstract Silicon needles or micro wires have been produced using galvanostatic electrochemical etching and chemical over etching respectively. A 6 inch p-type (100) silicon wafer with resistivity 15-24 Ω cm and aluminum on the back side was used as starting material. Chemical over etching was performed in two steps: first, a treatment for passivating the surface of Si using an aqueous solution of polyethylene glycol and second, the Si needles were transferred immediately into the etchant which is an aqueous solution containg PEG and potassium hydroxide (KOH) pellets. The effect of varying the deposition parameters for electroless Cu deposition on silicon microwires is the main focus of this work. The bath solutions used for electroless Cu deposition were varied according to bath composition and composition concentration and additives.

Microwires, chemical overethcing, Electroless deposition, passivation

"Electroless Cu Deposition on Si Needles with Diffusion Constraints", International Journal of Emerging Technologies and Innovative Research (www.jetir.org), ISSN:2349-5162, Vol.11, Issue 4, page no.j525-j536, April-2024, Available :http://www.jetir.org/papers/JETIR2404969.pdf

"Electroless Cu Deposition on Si Needles with Diffusion Constraints", International Journal of Emerging Technologies and Innovative Research (www.jetir.org | UGC and issn Approved), ISSN:2349-5162, Vol.11, Issue 4, page no. ppj525-j536, April-2024, Available at : http://www.jetir.org/papers/JETIR2404969.pdf