• chandra mohan lakhinana
• vinod kumar

The wide bandgap, high electron mobility, and exceptional thermal stability of GaN HEMTs have led to an increasing recognition of their superior performance in high-temperature applications. This study investigates the electrical performance and material features of GaN HEMTs, with a focus on their dependability at high temperatures. GaN HEMT is simulated from 300K to 900K with Sapphire and AlN as substrates. GaN HEMT used AlN as spacer and n-GaN cap layer is used for surface charge distribution and improving overall device performance. GaN HEMT is checked for electrical properties like on-current, off-current, threshold voltage, subthreshold swing(SS) and transconductance. In the study, GaN HEMT with AlN substrate showed better and stable output characteristics compared to GaN HEMT on Sapphire substrate.

GaN HEMT, n-GaN cap layer, on-current, off-current, threshold voltage, subthreshold swing(SS), transconductance

"High Temperature Electrical Performances of n-GaN HEMT", International Journal of Emerging Technologies and Innovative Research (www.jetir.org), ISSN:2349-5162, Vol.11, Issue 6, page no.f391-f394, June-2024, Available :http://www.jetir.org/papers/JETIR2406543.pdf

"High Temperature Electrical Performances of n-GaN HEMT", International Journal of Emerging Technologies and Innovative Research (www.jetir.org | UGC and issn Approved), ISSN:2349-5162, Vol.11, Issue 6, page no. ppf391-f394, June-2024, Available at : http://www.jetir.org/papers/JETIR2406543.pdf