• Ritick Sharma
• Vinod Kumar

Silicon-on-insulator (SOI) FinFETs present notable benefits in a terms of low power consumption and high performance when compared to traditional bulk FinFETs. This article investigates the optimization and performance evaluation of 14nm SOI FinFETs fabricated in Silvaco TCAD using a variety of channel materials (GaN, SiGe, GaAs, Si, and Ge). The study examines the effects of selecting the channel material and the dimensions of the device (including the thickness and height of the fins) on critical device parameters, including ion current, ioff current, ion/ioff ratio, threshold voltage, and subthreshold oscillation. The findings suggest that GaN FinFETs demonstrate enhanced ion current and an Ion/Ioff ratio in comparison to SiGe FinFETs, with comparable sub-threshold slopes of approximately 61.6 mV/decade. In addition, the research indicates that ion current is enhanced for both materials when the thickness of the fins is decreased.When utilized as a fin material, GaAs offers enhanced temperature controllability

SOI FinFET, Fin-Materials, Silvaco TCAD, Ion/Ioff ratio,sub-threshold slope,Temperature Controllability

"Performance Optimization of 14nm SOI-FinFETs Through Different Fin Materials", International Journal of Emerging Technologies and Innovative Research (www.jetir.org), ISSN:2349-5162, Vol.11, Issue 6, page no.h268-h271, June-2024, Available :http://www.jetir.org/papers/JETIR2406729.pdf

"Performance Optimization of 14nm SOI-FinFETs Through Different Fin Materials", International Journal of Emerging Technologies and Innovative Research (www.jetir.org | UGC and issn Approved), ISSN:2349-5162, Vol.11, Issue 6, page no. pph268-h271, June-2024, Available at : http://www.jetir.org/papers/JETIR2406729.pdf